Dual High Side Switches in Smart Power Technology
Integrated solution for two output channels simplifies design and enhances reliability The device, the VNI2140J, integrates on-chip two 45V Power MOSFETs channels (80mOhm typical Rds(on) at 25...
View ArticleDrive Engineering and Circuitry
17 mm technology: Rectifiers, IGBTs and drivers for motor control The IGBT is seen as the power semiconductor solving problems, combining the advantages of bipolar and field effect technology,...
View ArticleDriving eGaNTM FETs
Both gate and Miller capacitances are significantly lower As enhancement mode gallium-nitride-on-silicon transistors (eGaNTM) gain wider acceptance as the successor to the venerable - but aged -...
View ArticleEnhanced Over-Voltage Protection of Solar Installations
Through-out its voltage / current characteristic, the Varistor is actually conducting Varistors offer a cost effective solution for the protection over Solar Invertors against over-voltages....
View ArticleEthernet In Fast Forward
Automotive Using Ethernet as Physical Layer Data Bus Ethernet has been officially be added to the list of automotive networks, such as CAN, LIN, FlexRay and MOST. But why did Ethernet make the...
View ArticleUsing Microprocessor Supervisory Devices
Several important parameters need to be considered When microprocessor systems have to restart, a dedicated reset IC can improve system reliability by ensuring proper initialization of the...
View ArticleReview of the ECPE Workshop on Advanced Multilevel Converter Systems
By Dr. Thierry Meynard, University of Toulouse, LAPLACE - CIRTEM, Technical Chairman of the ECPE Workshop With more than 165 participants, the ECPE Workshop held in Västerås (Sweden) has...
View ArticleA 10kV HPT IGCT with Improved Switching Capability
Developing a new platform for high voltage switching A major issue for the 10 kV IGCT has been the limited turn-off capability. By introducing the new HPT technology a 10 kV IGCT is in...
View ArticleSwitching in silence
650V IGBT4 the optimized device for reduced EMI and low ΔV The trend of the last years of all power semiconductor manufacturers to increase the switching speed of the devices offers the benefit...
View ArticleBringing GaN on Si Based Power Devices to Market
The Status of the GaNpowIR™ platform at International Rectifier The availability of new power electronics based on commercially viable wide band gap semiconductors such as GaN on silicon power...
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